发明名称 ISOLATION METHOD OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for isolating a semiconductor device is provided to solve the difficulty of a device isolation process due to integration by forming an active region. CONSTITUTION: A silicon layer is formed on a substrate(100). An active region is formed by etching the silicon layer. An insulation layer(11,13) is formed to isolate the active region. A trench is formed on the insulation layer of the lower side of the active region. The insulation layer is comprised of an oxidation layer.
申请公布号 KR20100026233(A) 申请公布日期 2010.03.10
申请号 KR20080085157 申请日期 2008.08.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 WON, SE RA
分类号 H01L21/76 主分类号 H01L21/76
代理机构 代理人
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