摘要 |
PURPOSE: A method for isolating a semiconductor device is provided to solve the difficulty of a device isolation process due to integration by forming an active region. CONSTITUTION: A silicon layer is formed on a substrate(100). An active region is formed by etching the silicon layer. An insulation layer(11,13) is formed to isolate the active region. A trench is formed on the insulation layer of the lower side of the active region. The insulation layer is comprised of an oxidation layer.
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