| 摘要 |
PURPOSE: A method for manufacturing a semiconductor is provided to prevent the change of a DICD(Develop Inspection Critical Dimension) due to diffused reflection by forming a hard mask layer comprised of a nitrogen layer. CONSTITUTION: A first hard mask layer is formed on an etch target layer. A second hard mask pattern(43A) is formed on the first hard mask layer. A first hard mask pattern(42A) is formed by etching the first hard mask layer using the second hard mask pattern as an etch barrier. A part of the etch target layer is partially etched using the first hard mask pattern and the second hard mask pattern as the etch barrier and the second hard mask pattern is removed. A contact hole is formed by etching the remainder of the etch target layer using the first hard mask pattern as the etch barrier.
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