| 摘要 |
PURPOSE: A metal substrate for a semiconductor device and a plating solution and a plating method for the same are provided to reduce the quantity of wastewater by forming copper under-plating layer. CONSTITUTION: A metal material(11) is composed of one selected from copper, copper alloy, iron, iron alloy, nickel and nickel alloy. An under-plating layer(12) is formed on the surface of the metal material with copper. A main-plating layer(13) is formed on the under-plating layer with one selected from copper, nickel, and silver. A middle-plating layer is formed between the metal material and the under-plating layer. Copper is selected from one selected copper sulfate(CuSO4·5H2O) or copper pyrophosphate(Cu2P2O7·3H2O). |
