发明名称 |
Semiconductor device having isolated pockets of insulation in conductive seal ring |
摘要 |
A semiconductor device with a damascene wiring structure which can prevent short-circuits between a seal ring and a wiring line or electrode pad. An upper layer barrier layer made from a conductive barrier material film is formed on an interlayer insulating film groove sidewall of the semiconductor device. Embedded in the groove is an upper layer seal ring wiring line with thickness of approximately 10 micrometers for instance, in which a plurality of isolated pockets of insulators are disbursed. These isolated pockets of insulators are formed using the interlayer insulating film which forms the damascene wiring line. Additionally, a first upper layer groove wiring line and a second upper layer groove wiring line are formed in an element forming region, and an upper layer barrier layer is formed on the outside perimeter. The upper layer seal ring wiring line and both upper layer wiring lines all have damascene wiring structures.
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申请公布号 |
US7675175(B2) |
申请公布日期 |
2010.03.09 |
申请号 |
US20050150107 |
申请日期 |
2005.06.13 |
申请人 |
OKI SEMICONDUCTOR CO., LTD. |
发明人 |
TOKITOH SHUNICHI;KONDOU SEIICHI;YOON BO UN |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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