发明名称 |
Apparatus and method for ion beam implantation using ribbon and spot beams |
摘要 |
An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.
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申请公布号 |
US7675050(B2) |
申请公布日期 |
2010.03.09 |
申请号 |
US20070759876 |
申请日期 |
2007.06.07 |
申请人 |
ADVANCED ION BEAM TECHNOLOGY, INC. |
发明人 |
CHEN JIONG |
分类号 |
H01J37/317;H01J37/28 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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