发明名称 Apparatus and method for ion beam implantation using ribbon and spot beams
摘要 An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.
申请公布号 US7675050(B2) 申请公布日期 2010.03.09
申请号 US20070759876 申请日期 2007.06.07
申请人 ADVANCED ION BEAM TECHNOLOGY, INC. 发明人 CHEN JIONG
分类号 H01J37/317;H01J37/28 主分类号 H01J37/317
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