发明名称 |
Memory circuit, display device and electronic equipment each comprising the same |
摘要 |
A memory circuit using a thin film transistor has been problems such as the drop in yield and the decrease in speed of response of the memory circuit due to variations in transistors. The purpose of the invention is to improve the yield and speed of the response of a memory cell by driving a word line by a voltage which is different from the logical amplitude of the memory cell. The invention is applicable to an SRAM, a DRAM, a mask ROM, and the like. A memory circuit of the invention is formed integrally with a display device for realizing a multi-functional display device.
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申请公布号 |
US7675512(B2) |
申请公布日期 |
2010.03.09 |
申请号 |
US20040890110 |
申请日期 |
2004.07.14 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KOYAMA JUN;ATSUMI TOMOAKI |
分类号 |
G02F1/1345;G09G5/00;G02F1/133;G02F1/1368;G09G3/20;G09G3/30;G09G3/36;G11C7/00;G11C8/08;G11C11/407;G11C11/408;G11C11/413;G11C11/418;G11C17/18;H01L51/50 |
主分类号 |
G02F1/1345 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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