| 摘要 |
An electromegasonic wafer cleaning system is disclosed that is extremely important, if not essential, in the fabrication of advanced microelectronic devices having a line width or feature size of from 0.05 to 0.10 micron. A unique synergistic combination is provided wherein piezoelectric transducer means are operated at a tolerable power level, such as from 1 to 2 watts per square centimeter, to minimize the risk of harm to the extremely delicate microcircuits and wherein the face of each wafer is negatively charged to a temperate voltage, such as from 5 to 20 volts, sufficient to cause effective removal of colloidal or sub 0.4-micron contaminant particles. This unique wafer cleaning system supersedes and replaces the standard megasonic-assisted RCA-type wet wafer cleaning systems which have never been able to eliminate or provide efficient purging of harmful sub 0.1-micron particles.
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