发明名称 |
Nitride-based semiconductor device of reduced voltage drop |
摘要 |
A light-emitting device has a main semiconductor region formed via an n-type AlInGaN buffer region on a p-type silicon substrate, the latter being sufficiently electroconductive to provide part of the current path through the device. Constituting the primary working part of the LED, the main semiconductor region comprises an n-type GaN layer, an active layer, and a p-type GaN layer, which are successively epitaxially grown in that order on the buffer region. A heterojunction is created between p-type substrate and n-type buffer region. Carrier transportation from substrate to buffer region is expedited by the interface levels of the heterojunction, with a consequent reduction of the drive voltage requirement of the LED.
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申请公布号 |
US7675076(B2) |
申请公布日期 |
2010.03.09 |
申请号 |
US20060375964 |
申请日期 |
2006.03.15 |
申请人 |
SANKEN ELECTRIC CO., LTD. |
发明人 |
OTSUKA KOJI;MOKU TETSUJI;SATO JUNJI;TADA YOSHIKI;YOSHIDA TAKASHI |
分类号 |
H01L33/00;H01L21/20;H01L29/20;H01L29/267;H01L33/04;H01L33/12;H01L33/32;H01L33/34 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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