| 摘要 |
There is provided a semiconductor storage device including a substrate area, a first and a second isolation area, a first well area where the first transistor is placed, a second well area where the second transistor to output a first voltage to bring the first transistor into non-conduction is placed, and a third well area where the third transistor to output a second voltage to bring the first transistor into conduction is placed. The second and third well areas and the second isolation area are formed between two of the first well area, the second isolation area is formed between the second well area and one of the first well area, and the third well area is formed between the second well area and another one of the first well area.
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