发明名称 Method for forming spacers of different sizes
摘要 A method for forming spacers of different sizes includes the following steps. First a substrate is provided, which has a first element, a second element, a first material layer and a second material layer thereon. A first dry etching is performed to remove part of the second material layer to form a first spacer by the first element and to form a second side wall by the second element, so that the first material layer between the first spacer and the second side wall is exposed to become a damaged first material layer. A trimming procedure is performed to trim the damaged first material layer. A mask is used to cover the first element, the first spacer and part of the first material layer then a wet etching is performed to remove the second side wall.
申请公布号 US7674718(B2) 申请公布日期 2010.03.09
申请号 US20080025050 申请日期 2008.02.04
申请人 UNITED MICROELECTRONICS CORP. 发明人 LIU CHIA-HO;TSAI CHIEH-YU;LIN WEI-CHEN;LIN CHIA-YING
分类号 H01L21/302;H01L21/461 主分类号 H01L21/302
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