InAlGaN emitting light in ultraviolet short-wavelength region and process for preparing the same as well as ultraviolet light-emitting device using the same

摘要

For the purpose of emitting light in an ultraviolet short-wavelength region having a wavelength of 360 nm or shorter, it is arranged in InAlGaN in such that a ratio of composition of In is 2% to 20%, a ratio of composition of Al is 10% to 90%, and a total of ratios of composition in In, Al, and Ga is 100%.