发明名称 |
Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill |
摘要 |
A method of filling a gap defined by adjacent raised features on a substrate includes providing a flow of a silicon-containing processing gas to a chamber housing the substrate and providing a flow of an oxidizing gas to the chamber. The method also includes varying over time a ratio of the (silicon-containing processing gas):(oxidizing gas). The method also includes exposing the substrate to nitrous oxide at a temperature less than about 900° C. to anneal the deposited film.
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申请公布号 |
US7674727(B2) |
申请公布日期 |
2010.03.09 |
申请号 |
US20060549919 |
申请日期 |
2006.10.16 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YUAN ZHENG;ARGHAVANI REZA;VENKATARAMAN SHANKAR |
分类号 |
H01L21/31;C23C16/40;C23C16/44;C23C16/455;C23C16/52 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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