发明名称 |
Plasma processing apparatus |
摘要 |
A vacuum processing apparatus that includes an inner wall member disposed inside of an outer side wall member of a vacuum container, the inner wall member surrounding a side of a sample stand on which a sample to be processed is placed and facing to a plasma generated in a chamber inside of the inner wall member. The apparatus also includes an upper member arranged in the vacuum chamber above a flange portion of the inner wall member, contacting with an upper surface of the flange portion and transmitting a force pressing downwardly in a state where the inside of the vacuum container is reduced in pressure. The inner wall member is thermally connected with a temperature adjusting device which controls a temperature of the inner wall member through the upper surface of the flange portion and the upper member.
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申请公布号 |
US7674351(B2) |
申请公布日期 |
2010.03.09 |
申请号 |
US20040929439 |
申请日期 |
2004.08.31 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
MAKINO AKITAKA;KIHARA HIDEKI;TAUCHI SUSUMU |
分类号 |
C23F1/00;H01L21/3065;C23C16/00;H01L21/02;H01L21/306 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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