发明名称 Plasma processing apparatus
摘要 A vacuum processing apparatus that includes an inner wall member disposed inside of an outer side wall member of a vacuum container, the inner wall member surrounding a side of a sample stand on which a sample to be processed is placed and facing to a plasma generated in a chamber inside of the inner wall member. The apparatus also includes an upper member arranged in the vacuum chamber above a flange portion of the inner wall member, contacting with an upper surface of the flange portion and transmitting a force pressing downwardly in a state where the inside of the vacuum container is reduced in pressure. The inner wall member is thermally connected with a temperature adjusting device which controls a temperature of the inner wall member through the upper surface of the flange portion and the upper member.
申请公布号 US7674351(B2) 申请公布日期 2010.03.09
申请号 US20040929439 申请日期 2004.08.31
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 MAKINO AKITAKA;KIHARA HIDEKI;TAUCHI SUSUMU
分类号 C23F1/00;H01L21/3065;C23C16/00;H01L21/02;H01L21/306 主分类号 C23F1/00
代理机构 代理人
主权项
地址