发明名称 |
METHOD FOR MANUFACTURING GAN-BASED NITRIDE SEMICONDUCTOR SELF-SUPPORTING SUBSTRATE |
摘要 |
[PROBLEMS] To provide a method for manufacturing a stress-free GaN-based nitride compound semiconductor at low cost by simple process. [MEANS FOR SOLVING PROBLEMS] A method for manufacturing a GaN-based nitride semiconductor self-supporting substrate includes a step of preparing a substrate; a step of forming a GaN dot and an NHCl layer on the substrate; a step of forming a low-temperature GaN buffer layer on the GaN dot and the NHCl layer; a step of forming a GaN nitride semiconductor layer on the low-temperature GaN buffer layer; and a step of naturally removing the GaN-based nitride semiconductor layer from the substrate by returning the substrate temperature to a normal temperature.
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申请公布号 |
KR20100024944(A) |
申请公布日期 |
2010.03.08 |
申请号 |
KR20097026490 |
申请日期 |
2008.05.22 |
申请人 |
TOHOKU UNIVERSITY |
发明人 |
YAO TAKAFUMI;CHO, MEOUNG WHAN |
分类号 |
C30B25/18;C30B29/38;H01L21/20;H01L33/12;H01L33/32 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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地址 |
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