| 摘要 |
PURPOSE: A semiconductor device is provided to secure the margin of a short circuit safe operation area(SCSOA) by setting the amount of net-dose in an-n-type buffer area greater than the amount of non-dose in a drift area. CONSTITUTION: A first conductive emitter area(3) is formed on one side of a drift area(1). A second conductive base area(2) is arranged between the drift area and the emitter area. A gate electrode layer(5) is arranged to be electrically insulated from the base area. A second conductive collector area(7) is formed on the other side of the drift area. A first conductive buffer area(6) is arranged between the drift area and the collector area. The impurity concentration of the first conductive buffer area is higher than the drift area.
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