VERTICAL SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: A vertical semiconductor light emitting device and a method for manufacturing the same are provided to prevent a concentration of current in the operation of the light emitting device by dispersing the current through an n-type electrode. CONSTITUTION: A light emitting structure includes an active layer(202) and a p-type semiconductor layer(203), which are successively formed on an n-type semiconductor layer(201). A conductive substrate(205) is formed on the p-type semiconductor layer. An n-type electrode(204) is formed by expanding in the direction of a buried region and in the lateral direction of the n-type semiconductor layer from the buried region. The n-type electrode includes a region which is exposed to the outside of the n-type semiconductor layer. The n-type semiconductor layer is composed of an n-type GaN. The buried region is formed to be contained within the n-type semiconductor layer.