发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>PURPOSE: A thin film transistor display panel and a manufacturing method thereof are provided to simplify manufacturing processes and to reduce manufacturing costs. CONSTITUTION: A thin film transistor display panel includes an insulating substrates(110,210), a gate line(121), a gate insulating layer(140), an oxide semiconductor(154), a data line, a drain electrode(175), a protective film(180), and a pixel electrode(191). The gate line is formed on the insulating substrates and includes a gate electrode. The gate insulating layer is formed on the gate line. The oxide semiconductor is formed on the gate insulating layer. The data line is formed on the oxide semiconductor and includes a source electrode. The drain electrode is formed on the oxide semiconductor and faces with the source electrode in a location corresponding to the gate electrode. The protective film is formed on the data line and the drain electrode and has a contact hole(181) which exposes the drain electrode. The pixel electrode is formed on the protective film and connected with the drain electrode through the contact hole.</p>
申请公布号 KR20100024569(A) 申请公布日期 2010.03.08
申请号 KR20080083184 申请日期 2008.08.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOUNG, JONG HYUN;KIM, BONG KYUN;LEE, BYEONG JIN;HONG, SUN YOUNG;YUN, PIL SANG;PARK, HONG SICK;YANG, DONG JU;CHOI, YOUNG JOO;SUH, NAM SEOK
分类号 G02F1/136;H01L29/786 主分类号 G02F1/136
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