| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a bonding material that achieves higher bonding strength and higher fracture toughness than those of the conventional art while being free from a lead component regarding a bonding layer of an electrical bonding part in an electronic component, to provide a semiconductor device having the bonding material as a bonding layer, and to provide a method of manufacture the semiconductor device. <P>SOLUTION: The semiconductor device is configured such that electronic members are electrically connected to each other via a bonding layer. The bonding layer is a composite-metal sintered compact in which a metal X, whose hardness is higher than that of Ag, forms dispersion phases in an Ag matrix comprising crystal grains of 10-1,000 nm. The composite-metal sintered compact is configured as follows. The interface between the Ag matrix and each metal X dispersion phase is metal-bonded. The interface between the outermost surface of the electronic member and the Ag matrix is metal-bonded. The interface between the outermost surface of the electronic member and each metal X dispersion phase is metal-bonded. Each metal X phase is a single crystalline body or a polycrystalline body. Each metal X dispersion phase of the polycrystalline body is configured such that its internal grain boundary is metal-bonded without via an oxide coating layer. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
