| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a laser processing method which irradiates a laser beam along a street of the side face of a substrate layer while suppressing damage to an optical device or the like formed on the side face of a device layer of a wafer so as to trigger the division of the wafer by external force. <P>SOLUTION: The laser processing method for processing a wafer including a substrate layer w<SB>1</SB>and a device layer W<SB>2</SB>composed of a plurality of devices, wherein a laser beam is applied to the wafer along a division scheduled line S that partitions the devices in a defocused condition where the focal position f<SB>1</SB>of the laser beam is spaced apart from the surface position f<SB>0</SB>of the substrate layer w<SB>1</SB>by a predetermined distance d<SB>1</SB>. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
