| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a compound semiconductor that has a high light-receiving sensitivity in a wavelength range on the long-wavelength side, and to provide a method for manufacturing a semiconductor light-receiving element, a compound semiconductor, and the semiconductor light-receiving element. SOLUTION: A compound semiconductor includes at least In, Ga, As, and Sb on an InP substrate. At least one among the group V materials to be used, when manufacturing the compound semiconductor, is the group V material of an organic metal containing a dimethylamino group. COPYRIGHT: (C)2010,JPO&INPIT
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