| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nonvolatile semiconductor memory device that suppresses a decrease in cell current. Ž<P>SOLUTION: The nonvolatile semiconductor memory device includes: memory cell transistors MT which perform electrical writing and erasing of data, are connected in series, and have gate electrodes formed on a semiconductor substrate 1 with a tunnel oxide film 2 interposed; and selection gate transistors ST1 which are connected between ends of the series-connected memory cell transistors MT and bit lines or source lines, and have gate electrodes formed on the semiconductor substrate 1 with the gate insulating film 2 interposed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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