发明名称 SOLID-STATE IMAGING ELEMENT
摘要 PROBLEM TO BE SOLVED: To suppress reduction of a dynamic range even when element breakdown voltage drops without necessarily requiring a plurality of transistors with different thresholds in pixels. SOLUTION: A transfer transistor 14 transfers an electric charge from a photodiode 11 to floating diffusion (FD) 12. The FD 12 converts the electric charge into voltage. An amplification transistor 13 outputs a signal according to potential of the FD 12. A reset transistor 15 resets the FD 12 to supply potential Vrst potential during an on-period. Supply potential Vdd to be applied on a drain of the amplification transistor 13 is always set to a fixed low supply potential VDD. Supply potential Vdd to be applied on a drain of the reset transistor 15 is always set to a fixed high supply potential VDDU. Potential to be applied on a gate of the reset transistor during the on-period of the reset transistor 15 is set to the high supply potential VDDU. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010050710(A) 申请公布日期 2010.03.04
申请号 JP20080212886 申请日期 2008.08.21
申请人 NIKON CORP 发明人 KAMASHITA ATSUSHI
分类号 H04N5/335;H04N5/355;H04N5/369;H04N5/372;H04N5/374 主分类号 H04N5/335
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