发明名称 |
Organic field-effect transistor, production method and intermediate structure therefor, and organic field-effect device |
摘要 |
An organic field-effect transistor normally includes: a source electrode and a drain electrode; an organic semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer adjacent to the organic semiconductor layer; and a gate electrode in contact with the gate insulating layer. The gate insulating layer according to the present invention is in a liquid state, constituted with a material containing no glue or thickener, a sole or main component of which is an ionic liquid. Thus the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher. As a result, an organic field-effect transistor capable of operating at low voltage and assuring ample current gain and high-speed response (the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher) is provided.
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申请公布号 |
US2010051913(A1) |
申请公布日期 |
2010.03.04 |
申请号 |
US20090458420 |
申请日期 |
2009.07.10 |
申请人 |
NATIONAL INSTITUTE OF JAPAN SCIENCE AND TECHNOLOGY AGENCY;CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY |
发明人 |
TAKEYA JUNICHI;ONO SHIMPEI;SEKI SHIRO |
分类号 |
H01L51/10;H01L51/40 |
主分类号 |
H01L51/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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