发明名称 |
LANTHANIDE YTTRIUM ALUMINUM OXIDE DIELECTRIC FILMS |
摘要 |
Electronic apparatus and methods of forming the electronic apparatus include a lanthanide yttrium aluminum oxide dielectric film on a substrate for use in a variety of electronic systems. The lanthanide yttrium aluminum oxide film may be structured as one or more monolayers. The lanthanide yttrium aluminum oxide film may be formed by atomic layer deposition.
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申请公布号 |
US2010052033(A1) |
申请公布日期 |
2010.03.04 |
申请号 |
US20090615083 |
申请日期 |
2009.11.09 |
申请人 |
AHN KIE Y;FORBES LEONARD |
发明人 |
AHN KIE Y.;FORBES LEONARD |
分类号 |
H01L29/788;H01L29/43;H01L29/92 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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