发明名称 POWER SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME
摘要 A power semiconductor module and a method of manufacture thereof includes lead a frame carrying lead having inner and outer lead portions. The outer lead portions, which are connected by soldering to semiconductor chips simultaneously, eliminate the need for using bonding wires. Since no bonding wire is used for connecting the leads and the semiconductor chips, a sufficient current capacity is obtained. The bonding between an insulating circuit board and the semiconductor chips and the bonding between the semiconductor chips and the leads can be made simultaneously in a single step of reflow-soldering. As a result, the mounting time can be shortened and the power semiconductor module can be manufactured more efficiently.
申请公布号 US2010055845(A1) 申请公布日期 2010.03.04
申请号 US20090576742 申请日期 2009.10.09
申请人 FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD. 发明人 IKAWA OSAMU;MOCHIZUKI EIJI;SOUTOME MASAYUKI;ARIKAWA NORIO
分类号 H01L21/50;H01L25/07;H01L25/18;H02M7/48 主分类号 H01L21/50
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