发明名称 |
Method of forming insulation layer of semiconductor device and method of forming semiconductor device using the insulation layer |
摘要 |
A method of forming an insulating layer of a semiconductor device, the method including preparing a semiconductor substrate having a plurality of structures and gaps between adjacent structures, forming an insulating layer for oxygen supply on the semiconductor substrate, forming an SOG (spin-on-glass) layer on the insulating layer for oxygen supply to fill the gaps, and curing the SOG layer, wherein the insulating layer for oxygen supply supplies oxygen to the SOG layer during curing of the SOG layer.
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申请公布号 |
US2010055868(A1) |
申请公布日期 |
2010.03.04 |
申请号 |
US20090461096 |
申请日期 |
2009.07.31 |
申请人 |
LEE MI-YOUNG;PARK MIN-YOUNG |
发明人 |
LEE MI-YOUNG;PARK MIN-YOUNG |
分类号 |
H01L21/762;H01L21/312;H01L21/316 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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