发明名称 METHOD FOR MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE
摘要 <p>A method for manufacturing a nitride substrate (10) is provided with the following steps.  First, a nitride crystal is grown.  Then, the nitride substrate (10) including a front surface (11) is cut from the nitride crystal.  In the cutting step, the nitride substrate (10) is cut such that the off-angle formed by the axis orthogonally intersecting with the front surface (11) and the m-axis or the a-axis is greater than zero.  When the nitride crystal is grown in the c-axis direction, in the cutting step, the nitride substrate (10) is cut from the nitride crystal along a plane which passes through the front surface and the rear surface of the nitride crystal, but which does not pass through the line segment formed by connecting the center of the radius of curvature of the front surface and that of the rear surface of the nitride crystal.</p>
申请公布号 WO2010024285(A1) 申请公布日期 2010.03.04
申请号 WO2009JP64852 申请日期 2009.08.26
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD.;ARAKAWA, SATOSHI;MIYANAGA, MICHIMASA;SAKURADA, TAKASHI;YAMAMOTO, YOSHIYUKI;NAKAHATA, HIDEAKI 发明人 ARAKAWA, SATOSHI;MIYANAGA, MICHIMASA;SAKURADA, TAKASHI;YAMAMOTO, YOSHIYUKI;NAKAHATA, HIDEAKI
分类号 C30B29/38;B24B1/00;C30B33/00;H01L21/304 主分类号 C30B29/38
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