| 摘要 |
PURPOSE: A contact structure for a semiconductor device and a forming method of the same are provided to improve constant resistance by forming a contact surface of a junction region and a contact plug to be a curved surface. CONSTITUTION: A gate insulating layer is formed on a semiconductor substrate(101). The gate pattern(SG,CG) is laminated on the gate insulating layer. A junction region(101a) is formed in the semiconductor substrate. The surface of the junction region is a curved surface. The insulating layer is formed on the semiconductor substrate. The contact plug passes through the insulating layer. The contact plug is contacted to the curved surface of the junction region.
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