发明名称 SEMICONDUCTOR DEVICE ,AND METHOD OF MANUFACTURING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that secures the high reliability even when a relatively large probe scar is formed on a surface of an electrode pad in an electric inspection of a semiconductor substrate which is carried out as a pre-stage in a manufacturing process of a W-CSP, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor device includes: the semiconductor substrate formed with at least one electrode pad on the surface; a rewiring layer connected to the electrode pad; and a sealing part for sealing the semiconductor substrate. The electrode pad includes: a first region having connections with the rewiring layer; and a second region on which a test probe is abutted in an inspection process of the semiconductor substrate. The semiconductor device is manufactured through the steps of: forming an insulating film coating the electrode pad on the semiconductor device; forming an opening in the insulating film to expose the first region of the electrode pad in the opening; forming the rewiring layer which is connected to the electrode pad exposed in the opening of the insulating film for covering the above of the second region of the electrode pad, on the insulating film; and forming a resin sealing part so as to cover the insulating layer and the rewiring layer by use of a resin. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010050224(A) 申请公布日期 2010.03.04
申请号 JP20080211962 申请日期 2008.08.20
申请人 OKI SEMICONDUCTOR CO LTD 发明人 YAMAGUCHI TADASHI;NAGASAKI KENJI
分类号 H01L21/3205;H01L23/12;H01L23/52 主分类号 H01L21/3205
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