| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a Schottky barrier diode (SBD) which has both electrodes formed on the same surface, allows flip-chip bonding, and exhibits superior VF characteristics. <P>SOLUTION: A Schottky barrier diode (SBD) comprises a semiconductor substrate, having a structure in which an N<SP>-</SP>-type second semiconductor region is laid on an N<SP>+</SP>-type first semiconductor region, and a barrier metal, between which and the second semiconductor region a Schottky contact is formed. The SBD has N<SP>+</SP>-type third semiconductor regions that extend from the surface of the second semiconductor region to the first semiconductor region. The SBD also has one or more first external electrodes that are electrically connected to the second semiconductor region and the barrier metal, and one or more second external electrodes that are electrically connected to the third semiconductor regions. The multiple third semiconductor regions are formed within the second semiconductor region so that they have an island shape and are equally spaced from each other, and both the first external electrodes and the second external electrodes are formed, on the same surface of the semiconductor substrate. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
