| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To satisfy both patterning accuracy and light shielding performance in using a hard mask and a light shielding band light shielding film in common relating to a method of manufacturing a halftone phase shift mask and a method of manufacturing a semiconductor device. <P>SOLUTION: The manufacturing method includes: a process of sequentially forming a halftone film 2 and a hard mask-cum-light shielding film 3 on a transparent substrate 1; a process of forming a film decrease compensating light shielding film 4 on the hard mask-cum-light shielding film 3; a process of selectively eliminating the film decrease compensating light shielding film 4 on a main circuit region 6; a process of forming a pattern on the hard mask-light shielding film 3 exposed to the main circuit region 6 to form a hard mask 7; a process of etching the halftone film 2 with the hard mask 7 as a mask to form a halftone film pattern 8; and a process of leaving the film decrease compensating light shielding film 9 in the light shielding band area in the periphery of the main circuit region 6 in eliminating the hard mask 7. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
