| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory for reading data more accurately as compared with the conventional art. <P>SOLUTION: This nonvolatile memory includes a nonvolatile memory cell 11 for storing the data and a read circuit connected to the memory cell 11 via first and second bit lines GBLX, GBLZ for reading the data stored in the memory cell 11. The read circuit includes: a load current supplying section 12 for making first and second load currents whose current values change according to whether the data are stored in the memory cell 11 or not flow to the first and second bit lines GBLX, GBLZ; a current-current conversion section 13 for converting the first and second load currents to first and second data bus currents the current values of which more greatly change than these load currents, and making them flow to first and second data buses RDBX, RDBZ; and a sense amplifier 15 connected to the current-current conversion section 13 via the first and second data buses RDBX, RDBZ for amplifying and outputting the difference voltage of the first and second data bus currents. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
