发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
A silicon nitride film including stoichiometrically excessive silicon with respect to nitrogen is formed. The silicon nitride film may be formed by supplying dichlorosilane to a substrate under a condition where CVD (chemical vapor deposition) reaction is caused to form a silicon film including several or less atomic layers on the substrate, supplying ammonia to the substrate in a non-plasma atmosphere to thermally nitride the silicon film under a condition where the nitriding reaction of the silicon film by the ammonia is not saturated, and alternately repeating the supplying of dichlorosilane and the supplying of ammonia.
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申请公布号 |
US2010055927(A1) |
申请公布日期 |
2010.03.04 |
申请号 |
US20090551001 |
申请日期 |
2009.08.31 |
申请人 |
HIROSE YOSHIRO;TAKASAWA YUSHIN;KATO TOMOHIDE;AKAE NANORI |
发明人 |
HIROSE YOSHIRO;TAKASAWA YUSHIN;KATO TOMOHIDE;AKAE NANORI |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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