| 摘要 |
PURPOSE: An apparatus for depositing thin films is provided to prevent delamination phenomenon of an unnecessary thin film deposited on a chamber by preventing a GST from being deposited on most of hafnium oxide. CONSTITUTION: A depositing thin film(300) comprises a chamber(310), a susceptor(320), and a gas injection device(330). The susceptor is installed inside the chamber. The substrate is placed on the susceptor. The gas injection device is installed above the susceptor. The gas injection device supplies a gas to the chamber. Hafnium oxide(HfO2) is formed on the internal surface of the chamber.
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