| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device and a substrate processing apparatus that form, at a low temperature, an insulating film with extremely low concentration of impurities such as carbon, hydrogen, nitrogen, chlorine etc. in a film. SOLUTION: There are provided the steps of: forming a specific element-containing layer on a substrate by supplying source gas containing a specific element into a processing container in which the substrate is accommodated; changing the specific element-containing layer into a nitride layer, by activating and supplying gas containing nitrogen into the processing container; and changing the nitride layer into an oxide layer or an oxynitride layer, by activating and supplying gas containing oxygen into the processing container. These processes are set as one cycle, and this cycle is performed at least one or more times. COPYRIGHT: (C)2010,JPO&INPIT |
