Halbleiterbauelement

摘要

1,200,975. Semi-conductor devices. SIEMENS A.G. 25 Jan., 1968 [25 Jan., 1967], No. 4051/68. Heading H1K. A semi-conductor device, such as a thyristor, having incorporated in its semi-conductor body a substance forming recombination centres to reduce the recovery period after quenching, where the solubility of the substance in the semi-conductor material decreases with decreasing temperature, has an oxygen content of less than 1016 atoms/c.c. in the crystal structure of the body and a mean dislocation density over a plane parallel to the main faces of the wafer in the unmodified part of the crystal of less than 1000/cm2. The local density of such dislocations measured over a square of side equal to the thickness of the body on such a plane is everywhere less than 10,000/cm2. Uniform and reliable parameter values,are then obtained. In devices where the area of the plane parallel to the main faces of the body in the unmodified part of the crystal is greater than 8 cm2. the dislocation density needs only to be less than 20,000/cm2. and the local density related to a square of side equal to the thickness of the body, on such a plane, needs only to be less than 50,000/cm2.