发明名称 SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 Disclosed herein is a solid-state imaging device including: a semiconductor layer; a charge accumulation region configured to be formed inside the semiconductor layer and serve as part of a photodiode; and a reflective surface configured to be disposed inside or under the charge accumulation region and be so formed as to reflect light that has passed through the charge accumulation region and direct the light toward a center part of the charge accumulation region.
申请公布号 US2010053400(A1) 申请公布日期 2010.03.04
申请号 US20090545924 申请日期 2009.08.24
申请人 SONY CORPORATION 发明人 IKEDA HARUMI;NAKAZAWA MASASHI
分类号 H04N5/335;H01L21/02;H01L21/20;H01L27/12;H01L27/14;H01L27/146;H01L31/18 主分类号 H04N5/335
代理机构 代理人
主权项
地址