| 摘要 |
A magnetoresistive element includes first and second shield layers, an MR stack disposed therebetween, a first hard magnetic layer for setting the magnetization direction of the first shield layer, and a second hard magnetic layer for setting the magnetization direction of the second shield layer. The MR stack includes a first ferromagnetic layer magnetically coupled to the first shield layer, a second ferromagnetic layer magnetically coupled to the second shield layer, and a spacer layer between the first and second ferromagnetic layers. The first and second ferromagnetic layers have magnetizations that are in antiparallel directions when any external magnetic field other than a magnetic field resulting from the first and second hard magnetic layers is not applied to the two ferromagnetic layers, and that change their directions in response to an external magnetic field other than the magnetic field resulting from the first and second hard magnetic layers.
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