发明名称 |
ULTRA VIOLET LIGHT EMITTING DIODE WITH A ALUMINUM REFLECTION STRUCTURE AND FABRICATION METHOD OF THE SAME |
摘要 |
PURPOSE: An ultra violet light emitting diode with a aluminum reflection structure and a fabrication method of the same are provided to improve the characteristic of an ohmic electrode by covering a reflective structure with the ohmic electrode. CONSTITUTION: An ultraviolet light emitting diode comprises a first conductive semiconductor layer(55), an active layer(57), a second conductive semiconductor layer(59), an Al reflective structure(60), and an ohmic electrode(65). The Al reflective structure is formed on the second conductive semiconductor layer. The Al reflective structure exposes a part of the second conductive semiconductor layer to the outside. The ohmic electrode covers an exposed second conductive semiconductor layer. The active layer emits the ultraviolet light.
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申请公布号 |
KR20100023274(A) |
申请公布日期 |
2010.03.04 |
申请号 |
KR20080081950 |
申请日期 |
2008.08.21 |
申请人 |
SEOUL OPTO DEVICE CO., LTD. |
发明人 |
MOON, SOO YOUNG;LEE, KYU HO;JIN, SANG KI |
分类号 |
H01L33/10 |
主分类号 |
H01L33/10 |
代理机构 |
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地址 |
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