METHOD FOR FORMING COMPOUND EPITAXIAL LAYER, COMPOUND EPITAXIAL LAYER, SEMICONDUCTOR LAMINATE STRUCTURE, AND SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

Disclosed is a method for forming a compound epitaxial layer.  (a) A ZnO substrate having a growth plane that makes an angle of not less than 10° with a {0001} plane is provided.  (b) All or some of the elements for compound epitaxial layer formation are intermittently supplied on the growth plane on the substrate.  The compound epitaxial layer is formed by crystal growth on the ZnO substrate by supplying the elements so that, in an intermittent supply sequence, any supply duration time Ton (sec) and the supply ceasing time Toff (sec), which is the time period between the completion of the element supply and the subsequent element supply, satisfy the following formulae: 1 × 10-6 sec = Toff = 1 × 10-2 sec 1 × 10-6 sec = Ton = 1 × 10-2 sec The method can reduce the occurrence of droplets, which lower the yield of the epitaxial layer and, at the same time, can form a compound epitaxial layer having good crystallinity.