发明名称 CONDUCTIVE VIA FORMATION
摘要 A method involves depositing a first electrically conductive material, using a deposition technique, into a via formed in a material, the via having a diameter at a surface of the material of less than about 10μm and a depth of greater than about 50μm, so as to form a seed layer within the via, then creating a thickening layer on top of the seed layer by electrolessly plating the seed layer with a second electrically conductive material without performing any activation process within the via between via formation and the creating the thickening layer, and then electroplating a conductor metal onto the thickening layer until a volume bounded by the thickening layer within the via is filled with the conductor metal.
申请公布号 KR20100023805(A) 申请公布日期 2010.03.04
申请号 KR20097023967 申请日期 2008.06.19
申请人 CUFER ASSET LTD. L.L.C. 发明人 TREZZA JOHN
分类号 C23C18/16;C23C18/18;C23C18/31;C25D5/02 主分类号 C23C18/16
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