| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an ohmic junction layer which has superior surface flatness, superior uniformity of a composition of an interface with a semiconductor base, and sufficiently high adhesiveness with a Schottky junction layer. SOLUTION: The semiconductor device includes the n-type SiC semiconductor base 1, a cathode electrode 5 which comes into ohmic contact with one principal surface 1b of the SiC semiconductor base 1, a first semiconductor region 6a formed on the other principal surface 1a of the SiC semiconductor base 1 and made of p-type SiC, a second semiconductor region 6b formed on the other principal surface 1a and made of n-type SiC, the ohmic junction layer 7 coming into ohmic contact with the first semiconductor region 1a, and a Schottky junction layer 8 coming into Schottky contact with the second semiconductor region 6b, wherein the root-mean square roughness of the ohmic junction layer 7 is≤20 nm. COPYRIGHT: (C)2010,JPO&INPIT |
