| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device such as a DRAM wherein a contact window is formed in a conductive layer different in height from a substrate. Ž<P>SOLUTION: First conductive patterns 19, 20, a first insulation film 26, a second insulation film 30 having a different etching characteristic, a third insulation film 52, a storage electrode 39, a capacitor insulation film, a counter electrode 40 and a fourth insulation film 41 having a different etching characteristics, are formed on a semiconductor substrate 16; a mask having a first opening above the first conductive patterns 19, 20 and a second opening above the counter electrode 40 is formed; the fourth insulation film 41 and the second insulation film 30 below the first opening are etched by using the first insulation film 26 as a stopper; the fourth insulation film 41 and the counter electrode 40 below the second opening are etched by using the third insulation film 52 as a stopper; the first insulation film 26 below the first opening is etched to form a first contact hole 44; the third insulation film 52 below the second opening is etched by using the second insulation film 30 as a stopper to form a second contact hole 42; and a conductive material is embedded. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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