| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS type capacitor with restricted leakage current to a silicon substrate. SOLUTION: A contacted area between a P-type silicon substrate 1 and an N-type low-concentration well region 2 is reduced by forming a trench on the silicon substrate at a charge accumulation region 6 of a MOS type capacitor, so that the MOS type capacitor with a reduced leakage current from the N-type low-concentration well region 2 to the P-type silicon substrate 1 can be obtained. COPYRIGHT: (C)2010,JPO&INPIT
|
