发明名称 |
GROUP III-NITRIDE SEMICONDUCTOR THIN FILM, METHOD FOR FABRICATING THE SAME, AND GROUP III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
Disclosed herein is a high-quality group III-nitride semiconductor thin film and group III-nitride semiconductor light emitting device using the same. To obtain the group III-nitride semiconductor thin film, an AlInN buffer layer is formed on a (1-102)-plane (so called r-plane) sapphire substrate by use of a MOCVD apparatus under atmospheric pressure while controlling a temperature of the substrate within a range from 850 to 950 degrees Celsius, and then, GaN-based compound, such as GaN, AlGaN or the like, is epitaxially grown on the buffer layer at a high temperature. The group III-nitride semiconductor light emitting device is fabricated by using the group III-nitride semiconductor thin film as a base layer.
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申请公布号 |
US2010055883(A1) |
申请公布日期 |
2010.03.04 |
申请号 |
US20090612206 |
申请日期 |
2009.11.04 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD.;THE UNIVERSITY OF TOKUSHIMA |
发明人 |
CHOI RAK JUN;SHIRO SAKAI;YOSHIKI NAOI |
分类号 |
H01L21/20;H01L33/06;H01L33/12;H01L33/16;H01L33/32 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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