| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide semiconductor manufacturing equipment and a semiconductor manufacturing method for removing a carbon CVD film deposited on the bevel part of a wafer by dry etching, and preventing production of dust, considerable drop of the throughput or the like. Ž<P>SOLUTION: The semiconductor manufacturing equipment 1 for depositing the carbon CVD film on the wafer 5 by using the PE-CVD (Plasma Enhanced Chemical Vapor Deposition) method comprises a stage 4 provided inside an equipment body 2 to place the wafer 5 thereon, a shower head 3 for closing the upper opening part of the equipment body 2, and a gas supply system having a center gas introduction unit 9 for introducing gas from the center part of the shower head 3 toward the center part of the wafer 5 and an outer circumferential gas introduction unit 10 for introducing gas from the outer circumferential part of the shower head 3 toward the bevel part of the wafer 5. When depositing the carbon CVD film on the wafer 5, the etching gas for executing the etching removal of the carbon CVD film deposited on the bevel part of the wafer 5 is activated outside the equipment body 2, and fed from the outer circumferential gas introduction unit 10 toward the bevel part of the wafer 5. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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