| 摘要 |
Apparatus for cathodic sputtering comprises an anode substantially surrounding a cathode, an inert gas such as hydrogen, helium, argon or neon being introduced into the evacuated space between the anode and cathode during sputtering and an electric potential being applied between the anode and cathode to effect a glow discharge so that reactive <PICT:1077214/C6-C7/1> impurities in the inert gas react with the flow of electrons from the cathode and are deposited on the anode. The substrates which may be coated are glass, ceramics, magnesia and metals and the materials deposited may be superconductive and reactive materials such as V3Si, V3Ge, V3Ga, Ta and N6. The anode may be the vacuum chamber (see Fig. 1 not shown) which completely surrounds the cathode or it may be in the form of a bell which surrounds the cathode on all sides except the side facing the substrate (see Fig. 2 not shown). As shown in Fig. 3 the apparatus may comprise two cathodes 36 and 37, an anode 34 enveloping the cathodes, an inlet 33 for the inert gas and a vacuum connection 32. The substrate 40 is supported on an electrical resistance element 41 and a movable shutter 44 is located between the cathode 36 and the substrate. The substrate is preferably maintained 650 DEG -1000 DEG C. during sputtering a partial pressure of 10-4 torr or higher being maintained in the vacuum chamber. After evacuating an inert gas such as argon is introduced into the chamber, the target is first sputtered in the absence of the substrate to bring the target to a steady state. The substrate is then introduced, outgassed and then coated by sputtering. After the required film is obtained the shutter 44 is positioned between the substrate and cathode and sputtering is terminated. |
