| 摘要 |
An organic field effect transistor comprising a gate electrode 2, a gate insulating layer 3, a semiconductor layer 4, a source electrode 7, and a drain electrode 8, wherein the source electrode 7 and the drain electrode 8 are composed of conductive layers 6 and 6′, and compound layers 5 and 5′ comprising an acceptor compound, respectively, wherein the compound layers 5 and 5′ are each located in contact with the semiconductor layer 4, and wherein the semiconductor layer 4 contains a polymer compound having an ionization potential of 5.0 eV or more.
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