SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

Provided is a semiconductor light emitting element wherein generation of an open failure of the semiconductor light emitting element can be eliminated by ensuring a current pathway when disconnection is generated in a translucent electrode layer. A semiconductor light emitting element (10) is provided with: a first semiconductor layer (12) on a substrate (11); a light emitting layer (13) on the first semiconductor layer (12); a second semiconductor layer (14) on the light emitting layer (13); an insulator layer (15) provided with a hole section (19) in a partial region on the second semiconductor layer (14); a translucent electrode layer (16) covering the upper surface of the insulator layer (15) and the second semiconductor layer (14) without covering the hole section (19); and a second pad electrode (18) brought into contact with the translucent electrode layer (16) at a position where the pad electrode is in contact with the second semiconductor layer (14) through the hole section (19) and faces the insulator layer (15) with the translucent electrode layer (16) therebetween.  Contact resistance between the second pad electrode (18) and the second semiconductor layer (14) is set larger than that between the translucent electrode layer (16) and the second semiconductor layer (14).