发明名称 HIGH QUALITY TCO-SILICON INTERFACE CONTACT STRUCTURE FOR HIGH EFFICIENCY THIN FILM SILICON SOLAR CELLS
摘要 A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first TCO layer disposed on a substrate, a second TCO layer disposed on the first TCO layer, and a p-type silicon containing layer formed on the second TCO layer. In another embodiment, a method of forming a photovoltaic device includes forming a first TCO layer on a substrate, forming a second TCO layer on the first TCO layer, and forming a first p-i-n junction on the second TCO layer.
申请公布号 US2010051098(A1) 申请公布日期 2010.03.04
申请号 US20090481175 申请日期 2009.06.09
申请人 APPLIED MATERIALS, INC. 发明人 SHENG SHURAN;CHAE YONG KEE;KLEIN STEFAN;AL-BAYATI AMIR;KUMAR BHASKAR
分类号 H01L31/00;H01L31/18 主分类号 H01L31/00
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